Stochastic learning in oxide binary synaptic device for neuromorphic computing

نویسندگان
چکیده

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Stochastic learning in oxide binary synaptic device for neuromorphic computing

Hardware implementation of neuromorphic computing is attractive as a computing paradigm beyond the conventional digital computing. In this work, we show that the SET (off-to-on) transition of metal oxide resistive switching memory becomes probabilistic under a weak programming condition. The switching variability of the binary synaptic device implements a stochastic learning rule. Such stochast...

متن کامل

Novel synaptic memory device for neuromorphic computing

This report discusses the electrical characteristics of two-terminal synaptic memory devices capable of demonstrating an analog change in conductance in response to the varying amplitude and pulse-width of the applied signal. The devices are based on Mn doped HfO₂ material. The mechanism behind reconfiguration was studied and a unified model is presented to explain the underlying device physics...

متن کامل

A Device for Generating Binary Sequences for Stochastic Computing

A novel technique for the generation of high speed stochastic bit streams in which thè1' density is proportional to a given value. Bit streams of this type are particularly useful in bit serial stochastic computing systems, such as digital stochastic neural networks. The proposed circuitry is highly suitable for VLSI fabrication.

متن کامل

Neural Network with Binary Activations for Efficient Neuromorphic Computing

In this paper, we proposed techniques to train and deploy a multi-layer neural network using softmax loss for binary activations to best capitalize on its energy efficiency. These techniques include using the gradient of tanh function to approximate gradient of discrete binary threshold function during the backpropagation of training, and using a stochastic multi-sampling approach to convert hi...

متن کامل

3D Vertical Dual-Layer Oxide Memristive Devices for Neuromorphic Computing

Dual-layer resistive switching devices with horizontal W electrodes, vertical Pd electrodes and WOx switching layer formed at the sidewall of the horizontal electrodes have been fabricated and characterized. The devices exhibit well-characterized analog switching characteristics and small mismatch in electrical characteristics for devices formed at the two layers. The three-dimensional (3D) ver...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Frontiers in Neuroscience

سال: 2013

ISSN: 1662-453X

DOI: 10.3389/fnins.2013.00186